Wu WW, Lu KC, Wang CW, Hsieh HY, Chen SY, Chou YC, Yu SY, Chen LJ

Wu WW, Lu KC, Wang CW, Hsieh HY, Chen SY, Chou YC, Yu SY, Chen LJ, RO4929097 in vitro Tu KN: Growth of multiple metal/semiconductor nanoheterostructures through point and line contact reactions. Nano Lett 2010, 10:3984–3989.CrossRef 9. Lu KC, Wu WW, Ouyang H, Lin YC, Huang Y, Wang CW, Wu ZW, Huang

CW, Chen LJ, Tu KN: The influence of surface oxide on the growth of metal/semiconductor nanowires. Nano Lett 2011, 11:2753–2758.CrossRef 10. Hsu SC, Hsin CL, Yu SY, Huang CW, Wang CW, Lu CM, Lu KC, Wu WW: Single-crystalline Ge nanowires and Cu3Ge/Ge nano-heterostructures. Cryst Eng Comm 2012, 14:4570–4574.CrossRef 11. Wu WW, Lu KC, Chen KN, Yeh PH, Wang CW, Lin YC, Huang Y: Controlled large strain of Ni silicide/Si/Ni silicide nanowire heterostructures and their electron transport properties. Appl Phys Lett 2010, 97:203110.CrossRef 12. Kim J, Lee ES, Han CS, Kang Y, Kim D, Anderson WA: Observation of Ni silicide formation and field emission properties of Ni silicide nanowires. Microelectron Eng 2008, 85:1709–1712.CrossRef 13. Kim J, Anderson WA: Spontaneous nickel monosilicide nanowire formation by metal induced growth. Thin Solid Films 2005, 483:60–65.CrossRef 14. Kim CJ, Kang K, Woo YS, Ryu KG, Moon H, Kim JM, Zang DS, Jo MH: Spontaneous chemical vapor growth of NiSi nanowires and their metallic properties. Adv Mater 2007, 19:3637–3642.CrossRef 15. Kim J, Shin DH, Lee ES, Han CS, Park Epigenetic Reader Domain inhibitor YC: Electrical

characteristics of single and doubly connected Ni silicide nanowire grown by PRKACG plasma-enhanced chemical vapor deposition. Appl Phys Lett 2007, 90:253103.CrossRef 16. Yan XQ, Yuan HJ, Wang JX, Liu DF, Zhou ZP, Gao Y, Song L, Liu LF, Zhou WY, Wang G, Xie SS: Synthesis and characterization of a large amount of branched Ni 2 Si nanowires. Appl Phys A 2004, 79:1853–1856.CrossRef 17. Kang K, Kim SK, Kim CJ, Jo MH: The role of NiO x overlayers on spontaneous growth of NiSi x nanowires from Ni seed layers. Nano Lett 2008, 8:431–436.CrossRef 18. Chueh YL,

Chou LJ, Cheng SL, Chen LJ, Tsai CJ, Hsu CM, Kung SC: Synthesis and characterization of metallic TaSi 2 nanowires. Appl Phys Lett 2005, 87:223113.CrossRef 19. Chueh YL, Ko MT, Chou LJ, Chen LJ, Wu CS, Chen CD: TaSi 2 nanowires: a potential field emitter and interconnect. Nano Lett 2006, 6:1637–1644.CrossRef 20. Xiang B, Wang QX, Wang Z, Zhang XZ, Liu LQ, Xu J, Yu DP: Synthesis and field emission properties of TiSi 2 nanowires. Appl Phys Lett 2005, 86:243103.CrossRef 21. Ouyang L, Thrall ES, Deshmukh MM, Park H: Vapor phase synthesis and characterization of ϵ-FeSi nanowires. Adv Mater 2006, 18:1437–1440.CrossRef 22. Varadwaj KSK, Seo K, In J, Mohanty P, Park J, Kim B: Phase-controlled growth of metastable Fe 5 Si 3 nanowires by a vapor transport method. J Am Chem Soc 2007, 129:8594–8599.CrossRef 23. Szczech JR, Schmitt AL, Bierman MJ, Jin S: Single-crystal semiconducting chromium disilicide nanowires synthesized via chemical vapor transport. Chem Mater 2007, 19:3238–3243.CrossRef 24.

Leave a Reply

Your email address will not be published. Required fields are marked *

*

You may use these HTML tags and attributes: <a href="" title=""> <abbr title=""> <acronym title=""> <b> <blockquote cite=""> <cite> <code> <del datetime=""> <em> <i> <q cite=""> <strike> <strong>